电子束光刻机 EBL-JEOL6300
2013-12-17 13:49:56    点击:

基本信息:


2013106300FS系统完成安装调试并开始运行。该系统使用矢量偏转的电子束扫描电子束胶表面,形成微米乃至纳米尺度的各种掩膜图形,用于后续的器件加工。该系统现在主要工作在100KV


主要参数:


热场发射电子束源 (ZnO/W)

最小电子束斑~ 3nm @ 100kV

最大扫描速率 = 50 MHz

最大样品尺寸 150x150 mm

样品台移动精度0.6nm (λ/1024)

两套电子束偏转系统:
5th Lens (8nm) and 4th Lens modes (25-40nm)

电子束流范围30pA-20nA

具有动态聚焦和像散校正功能

样品台最大移动速度10mm/sec

使用UNIX系统进行仪器控制


General Information:


The 6300FS machine was installed at USTC in Oct. 2013.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 50 and 100 kV. Note however, that the lower-resolution 50 kV mode is not used at USTC.


Basic Specifications:


Thermal Field Emitter Source (ZnO/W)

Minimum Spotsize ~ 3nm @ 100kV

Maximum scan speed = 50 MHz

150x150 mm writable area (but can load 200mm wafers)

Stage control to 0.6 nm accuracy (λ/1024)

Two deflector/objective lens system:
5th Lens (8nm) and 4th Lens modes (25-40nm)

30pA-20nA current range

Dynamic Focus and Stigmation Control

10 mm/sec maximum stage speed

UNIX computer controlled