紫外光刻机 Optical Aligner-SUSS MABA6
2013-12-17 13:53:40    点击:

基本情况:

SUSSMA6光刻机是设计用于实验室研发,小批量生产的高分辨率光刻系统。该光刻机供了最好的基片适应性,可夹持不同厚度不同形状的晶片。同时标准尺寸基片最大直径为150mm。处理最大厚度可达6mm的晶片。SUSS MA6提供了各种接触式曝光程序。X-Y-向位移精度在0.1μm以下。使用400nm的宽带光源曝光波长在真空模式下分辨率为0.8μm。同时可以选用不同的对准装置,分离视场顶部对准显微镜或视频显微镜,BSA底面对准显微镜对准方式。是目前实验室光刻技术中最为常用和重要的光刻设备。


技术指标:

样品尺寸:2英寸,3英寸,4英寸,6英寸和不规则小片恒定光强:35mw/cm2 @ 365nm, 55mw/cm2 @ 405nm

曝光模式:真空硬接触,软接触,近邻。

最小线宽:0.8μm(真空模式)

对准精度:0.5μm 

均匀性:2% over 6" diameter


General Information:

This is a high-performance mask aligner used for contact exposure processes. It is a versatile, user-friendly compact unit. The resolution (depending on contact mode, optics and exposure wavelength and “operator technique”) is far into the submicron region. Our unit is configured for the near-UV window (365 and 405 nm) and have the “vacuum contact” option extending resolution to ~0.8 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, only give resolution to 1-2 microns. Exposures can be done on substrates from small “piece parts” of less than 1 cm square to substrates of 6 inch diameter or square. Special black chucks may be used for transparent materials. The system features an infrared camera for alignment to patterns on the backside of the wafer. 


Basic Specifications:

Wafer size: 2“,3“.4“,6” ,5mmx5mm~10mmx10mm

Exposure optics:

35mw/cm2 @ 365nm, 55mw/cm2 @ 405nm  

Exposure modeVac, hard, soft, proximity

Minimum line width0.8μmVac

Overlay Accuracy0.5μm

Uniformity: 2% over 6" diameter